Question
A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristic of the diode, D, represented approximately as a piecewise linear plot of current vs time at diode turn-off. L par is a parasitic inductance due to the wiring of the circuit and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 and 4) at which IGBT experiences the highest current stress is _________.
Answer :
Parasitic Inductance: It is an unwanted inductance effect that is unavoidably present in all practical electronic devices.
As opposed to deliberate inductance, which is introduced into the circuit by the use of an inductor, parasitic inductance is almost always an undesired effect.
From the diode current waveform, it is observed that the current at point 3 has a maximum negative value.
So, at point 3, IGBT experiences the highest current stress because of negative current.
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